Record 22.5% efficiency recorded for large area industrial crystalline silicon n-PERT solar cell

Nano-electronics research center imec announced at Intersolar Europe 2015, a new efficiency record for its large area n-type PERT (passivated […]


Nano-electronics research center imec announced at Intersolar Europe 2015, a new efficiency record for its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon (Cz-Si) solar cell, now reaching 22.5 percent (calibrated at ISE CalLab).

It is the highest efficiency achieved for a two-side-contacted solar cell processed on six inch commercially available n-type Cz-Si wafers without the use of passivated contacts.

You are reading a member exclusive article and we’re glad you’re enjoying it

To continue reading, you need a membership (free for limited time) account. If you are a member (with an account), please sign in ... if you would like to subscribe, please do so below.


Want to learn more? View membership benefits

More Stories From Around the Web:

More Stories on this Topic