The German thin-film PV technology developer Calyxo GmbH at Solar Valley in Bitterfeld-Wolfen reached >14.3% efficiency aperture area (97 Wp 0.72 m²; 13,5% full size area), with a new product generation which will be introduced in 2015.
Calyxo GmbH is one of the leading German manufacturers of highly innovative cadmium telluride (CdTe) thin-film solar modules and a supplier of turnkey photovoltaic systems.
“It’s a great achievement to concurrently both ramp-up a new production line and use it to meet the targeted performance goals for the new product development. We believe that we can achieve over 15% efficiency with the new product generation. We are convinced that the unique Calyxo deposition process, in addition to its cost advantages, has the potential for the highest semiconductor layer qualities”, Dr.-Ing. Michael Bauer, CTO / COO.
Calyxo GmbH has set new product generation goals for 2015. “The pressure for us to supply higher power classes is clearly evident in the market by competitive crystalline silicon module supplier offerings.
In the intermediate term, Calyxo’s new generation modules will produce more energy per installed area compared to the crystalline competition due to the better temperature coefficient. We also work on other product characteristics, which will reduce the cost of installation on customer side”, CEO Dr. Florian Holzapfel.
At temperatures above 25°C, Calyxo modules produce up to 10% more energy than comparable C-Si solar modules due to their lower temperature coefficient. The transition of development concepts into mass production is scheduled for the beginning of 2015 and is being designated under the new module product name CX4.
Together with the American parent company Solar Fields, research and rapid further development of the Calyxo CdTe technology are being driven forward. This technology features a huge potential for cost reduction in the field of solar power generation.
The temperature coefficient describes the relative change (% change/ °K) of a material property depending on the change in temperature compared to the measurement at the reference temperature. Temperature coefficient = -0.25% CdTe/°K, and C-Si = -0.43%/°K.