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China — LONGi announced a new efficiency breakthrough for its Gallium-doped p-type HJT silicon solar cell.

The new world record conversion efficiency of 25.47% for large p-type cells was achieved using a mass production process on full-size (M6, 274.3cm²) monocrystalline silicon wafers. The result was validated in testing carried out at the Institute for Solar Energy Research in Hamelin (ISFH).

LONGi also says its R&D team developed a p-type wafer processing solution for HJT cells and combined it with interface passivation technology to achieve a Voc of 747.6 mV for p-HJT cells.

It should be noted that the processing of the low-cost p-HJT cell solution applied in this record has not yet been fully optimized and LONGi is convinced that this technology route still has great potential for further development.

LONGi established a series of efficiency records, with its n-type TOPCon, p-type TOPCon and n-type HJT cells achieving conversion efficiencies of 25.21%, 25.19% and 26.30% respectively.

Going forward, the company says it’ll continue to increase its investment in technology R&D and focus on customer value creation to accelerate global energy transformation and contribute to the achievement of carbon reduction targets with its high-efficiency products continuing to deliver lower LCOE.


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